Package structure of compound semiconductor device and fabricating method thereof

ABSTRACT

A package structure of a compound semiconductor device comprises a thin film substrate, a die, at least one metal wire and a transparent encapsulation material. The thin film substrate comprises a first conductive film, a second conductive film, and an insulating dielectric material. The die is mounted on the surface of the first conductive film, and is electrically connected to the first conductive film and the second conductive film through the metal wire. The transparent encapsulation material overlays the first conductive film, second conductive film, and die. The surfaces of the first conductive film and second conductive film which is opposite the transparent encapsulation material act as electrodes. The insulating dielectric material is between the first conductive film and second conductive film.

BACKGROUND OF THE INVENTION

(A) Field of the Invention

The present invention relates to a package structure of a compoundsemiconductor device and fabricating method thereof, and moreparticularly, to a thin package structure and fabricating method of aphotoelectric semiconductor device.

(B) Description of the Related Art

Because the light emitting diode (LED) pertaining to the photoelectricdevice has advantages of a small body, high efficiency and long life, itis expected to be an excellent illumination source into the nextgeneration. In addition, LCD (liquid crystal display) technology isdeveloping rapidly and full color is the current trend in electronicproduct displays. Therefore, white series LEDs are not only applicableto indication lights and large size display screens but also to mostconsumer electronic products such as mobile phones and personal digitalassistants (PDA).

FIG. 1 is a schematic cross sectional diagram of the conventional SMD(surface mount device) of an LED device. An LED die 12 is mounted on anN-type conductive copper foil 13 b covering an insulation layer 13 cthrough die bonding paste 11, and is electrically connected to a P-typeconductive copper foil 13 a and the N-type conductive copper foil 13 bthrough metal wires 15. The assembly of the P-type conductive copperfoil 13 a, N-type conductive copper foil 13 b and insulation layer 13 cis on a substrate 13. Furthermore, a transparent encapsulation material14 covers the substrate 13, metal wires 15 and die 12 so that the wholeLED device 10 can be protected against damage from environmental andexternal forces.

The LED device 10 utilizes a common printed circuit board (PCB) as thesubstrate 13. The total thickness of the LED device 10 is limited by theinsulation layer 13 c of the substrate 13, and thus cannot be reducedfurther. However, the current trend of consumer electronic products istoward lightweight, small packages. Accordingly, each of the internaldevices of the consumer electronics product and its shell needs to beminiaturized. On the other hand, the insulation layer 13 c is mademostly of epoxy resin with poor heat dissipation, and therefore is notsuitable for a high power chemical compound semiconductor as aheat-transferring path.

FIG. 2 is a schematic cross sectional diagram of a high integral packagestructure disclosed by U.S. Patent Publication No. 2004/0090756. Thepackage structure has an insulating layer coated on a temporarysubstrate, and has electrical circuits which have been previouslydesigned and laid out on the insulating layer. Subsequently, LED dies221 and 222 are adhered to a substrate 23, and the LED dies 221, 222 andthe internal leads of the substrate 23 are connected to each otherthrough metal wires 25 by the wire bonding (or through bumps byflip-chip bonding). Conventional epoxy resin covers the LED dies 221 and222 by using a molding process. In order to reduce the thickness of thewhole package, the temporary substrate is removed from the insulatinglayer by the illumination of laser light or UV light. Tin balls 26 aresoldered to the default soldering pads. Thus, a highly integral andthinner package is obtained. However, the manufacturing processes of thepackage are complicated so that the cost of manufacture is high.

In view of the above, the consumer electronics market is in urgent needof a photoelectric compound semiconductor device with a thin typepackage. The device not only needs to have a reduced thickness forsaving space, but also needs to address the heat dissipation problem.With such a device, reliable, high power electronics products which canbe more easily manufactured.

SUMMARY OF THE INVENTION

One aspect of the present invention provides the package structure of acompound semiconductor device and fabricating method thereof. Thesemiconductor device has external electrodes or contacts uncovered by anencapsulation material. There is no printed circuit board between a dieand external electrodes for transmitting electrical signals, so the heatdissipation of the device is improved.

Another aspect of the present invention provides the package structureof a very thin semiconductor device and fabricating method thereof. Thethickness of the device can be reduced for saving space due to the useof a thin substrate or a metallic film.

According the aforesaid aspects, the present invention discloses thepackage structure of a compound semiconductor device comprising a thinfilm substrate, a die and a transparent encapsulation material. The thinfilm substrate comprises a first conductive film, a second conductivefilm, and an insulating dielectric material. The die is mounted on thesurface of the first conductive film. The transparent encapsulationmaterial overlays the first conductive film, second conductive film, anddie. The surfaces of the first conductive film and second conductivefilm which is opposite the transparent encapsulation material act aselectrodes. The insulating dielectric material is between the firstconductive film and the second conductive film.

The thickness of the thin film substrate preferably ranges between 20-50μm.

The insulating dielectric material is SiO, SiN, SiON, TaO, AlO, TiO,AlN, TiN, epoxy resin, silicone or insulating polymer.

The die is an LED die, a laser diode die or a photodiode die.

The package structure of the compound semiconductor device furthercomprises at least one metal wire electrically connecting the die andthin film substrate. The first conductive film further comprises a firstwire-bonding groove for bonding the metal wire, and the secondconductive film further comprises a second wire-bonding groove forbonding the metal wire.

The package structure of the compound semiconductor device furthercomprises a plurality of bumps electrically connecting the die and thinfilm substrate.

The first conductive film further comprises a die-bonding groove onwhich the die is mounted. A reflecting layer is overlaid on the surfacesof the die-bonding groove.

The package structure of the compound semiconductor device furthercomprises a patterned insulating material layer stacked on the thin filmsubstrate. The insulating material layer comprises a die-bonding groovefor bonding the die and a wire-bonding groove for bonding the metalwire.

The present invention discloses the manufacturing method of the packagestructure of a compound semiconductor device comprising the steps of:providing a thin film substrate comprising a first conductive film, asecond conductive film, and an insulating dielectric material; mountinga die onto the first conductive film, electrically connecting an anodeof the die to the first conductive film, electrically connecting acathode of the die to the second conductive film; and overlaying atransparent encapsulation material on the die.

The thin film substrate is manufactured by the following steps:providing a sheet; forming at least one slot to divide the sheet intothe first conductive film and second conductive film, and filling theinsulating dielectric material in the slot.

The slot is formed by a drilling process, an etching process or apunching process.

The manufacturing method further comprises a step of forming adie-bonding groove on the first conductive film.

The manufacturing method further comprises a step of forming a pluralityof wire-bonding grooves on the first conductive film and secondconductive film, wherein each of the wire-bonding grooves is formedwhere at least one of the metal wires is bonded.

The manufacturing method further comprises a step of stacking apatterned insulating material layer on the thin film substrate, whereinthe insulating material layer comprises a die-bonding groove for bondingthe die and a plurality of wire-bonding grooves for bonding at least onemetal wire.

The step of mounting the die onto the thin film substrate furtherelectrically connects the die to the thin film substrate by wire bondingor flip-chip bonding.

BRIEF DESCRIPTION OF THE DRAWINGS

The objectives and advantages of the present invention will becomeapparent upon reading the following description and upon reference tothe accompanying drawings in which:

FIG. 1 is a schematic cross sectional diagram of the conventional SMD(surface mount device) of an LED device;

FIG. 2 is a schematic cross sectional diagram of a highly integralpackage structure disclosed by U.S. Patent Publication No. 2004/0090756;

FIGS. 3A-3C are schematic illustrations showing the manufacturing stepsof a thin film substrate in accordance with the present invention;

FIG. 4A is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with the present invention;

FIG. 4B is a top view of the compound semiconductor device in FIG. 4A;

FIG. 5 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention;

FIG. 6 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention;

FIG. 7 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention;

FIG. 8 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention; and

FIGS. 9A-9D are schematic illustrations showing the formation of adie-bonding groove or a wire-bonding groove by an electroformingprocess.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 3A-3C are schematic illustrations showing the manufacturing stepsof a thin film substrate in accordance with the present invention. Asshown in FIG. 3A, a sheet 34 with a thickness of between 20-50 μm isprovided; for instance copper foil or a metal film with superiorconductivity. Moreover, a slot 33 is formed on the sheet 34 by adrilling process, an etching process or a punching process. The slot 33separates a first conductive film 31 at one side from a secondconductive film 32 at another side, that is, they are electricallyisolated from each other, as shown in FIG. 3B. Subsequently, aninsulating dielectric material 35 is filled in the slot 33 so that themanufacture of a thin film substrate 30 is finished. The insulatingdielectric material 35 can be SiO, SiN, SiON, TaO, AlO, TiO, AlN, TiN,epoxy resin, silicone or polymer. In this regard, the electricalinsulation between the first conductive film 31 and second conductivefilm 32 is improved, and the thin film substrate 30 is more rigid, asshown in FIG. 3C.

FIG. 4A is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with the present invention.A compound semiconductor device 40 utilizes the die-bonding technologyto adhere a compound semiconductor die 43 to the first conductive film31 of the thin film substrate 30, that is, the die 43 is mounted on thesurface of the first conductive film 31 by a die-bonding adhesive 47.The die 43 can be an LED die, a laser diode die or a photodiode die.Moreover, the die 43 and thin film substrate 30 are electricallyconnected to each other through metal wires 44 so that the thin filmsubstrate 30 acts as the package carrier of the die 43 and metal wires44. Final, by a molding process, a transparent encapsulation material 46overlays the die 43, metal wires 44, and thin film substrate 30 in orderto provide anti-moisture and protection effects. The transparentencapsulation material 46 can be epoxy resin or silicone.

FIG. 4B is a top view of the compound semiconductor device in FIG. 4A.For clearly illustrating the connection between the die 43, metal wires44, and thin film substrate 30, a portion of the transparentencapsulation material 46 is removed. Two metal wires 44 respectively gofrom the surface of the die 43 toward the first conductive film 31 andthe second conductive film 32, and connect them.

FIG. 5 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention. The compound semiconductor device 50 utilizes aflip-chip bonding process to mount the die 43 on the thin film substrate30 through bumps 54. Compared with FIG. 4A, the active surface of thedie 43 faces the thin film substrate 30, and tin balls are utilized toconnect the bonding pads of the die 43 and thin film substrate 30 toform the bumps 54. The bumps 54 are melted due to solder flux after areflow process, and solidify to electrically connect them. Final, by amolding process, a transparent encapsulation material 46 overlays thedie 43, metal wires 44, and thin film substrate 30 in order to haveanti-moisture and protection effects. In this embodiment, there areseveral advantages such as short current paths and excellent heatdissipation. In addition, compared with the previous embodiment, thepresent invention can reduce the loop height of the metal wires.

FIG. 6 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention. Regarding this embodiment, the thickness of thepackage structure is further reduced and the illumination brightness ofthe device is increased. A die-bonding groove 411 is formed on the firstconductive film 31′ of the thin film substrate 30 a, and a reflectinglayer 412 is deposited on the sidewalls and bottom of the die-bondinggroove 411. The die-bonding groove 411 can be formed by aphotolithography etching process, an electroforming process and adrilling process. The die 43 is adhered to the bottom of the die-bondinggroove 411, and the die-bonding groove 411 acts as a cup-like reflectivecavity. Lateral light emitted from the die 43 can be effectivelyreflected by the reflecting layer 412, and redirected towards the upperside. Therefore, the brightness of the compound semiconductor device 60is improved. In this embodiment, another advantage is that when the die43 is placed in the die-bonding groove 411 and the metal wires 44electrically connect the die 44 and thin film substrate 30 a, the heightof the wire loop of the gold wires is significantly reduced so as tofurther reduce the thickness of the entire package structure.

FIG. 7 is a cross-sectional diagram of the package structure of acompound semiconductor device in accordance with another embodiment ofthe present invention. Compared with the previous embodiment, thisembodiment further reduces the thickness of the package structure. Awire-bonding groove 413 is formed on the first conductive film 31″ ofthe thin film substrate 30 b for one of the metal wires 44 to indicatethe melting location of a second bond. Similarly, a wire-bonding groove421 is formed on the second conductive film 32′ for another of the metalwires 44 to indicate the melting location of a second bond. Because thesecond bond of the metal wire 44 is descended to the wire-bondinggroove, the thickness of the package structure of the compoundsemiconductor device 60 is reduced.

In the above embodiments, the die-bonding groove and wire-bonding grooveare formed by a photolithography etching process, an electroformingprocess and a drilling process. Furthermore, a patterned insulatingmaterial layer 36 can be formed on the thin film substrate 30, and adie-bonding groove 411 and wire-bonding grooves 413 and 421 are formedon the insulating material layer 36, as shown in FIG. 8. Therefore, thethickness of the package structure of the compound semiconductor device80 is reduced, which can prevent the metal wire 44 connected to thesecond conductive film 32 from short-circuit resulting from improperlycontacting the first conductive film 31.

FIGS. 9A-9D are schematic illustrations showing the formation of adie-bonding groove or a wire-bonding groove by an electroformingprocess. A patterned insulating material layer 36′ such as a photoresistmaterial is formed on the thin film substrate 30. A metal layer 37 isgradually grown on the surfaces of the first conductive film 31 and thesecond conductive film 32 uncovered by the insulating material layer 36′by an electroforming process. Moreover, the insulating material layer36′ is removed (for example, a photoresist striping step) to expose thedie-bonding groove 411 is and wire-bonding grooves 413 and 421.

The above-described embodiments of the present invention are intended tobe illustrative only. Those skilled in the art may devise numerousalternative embodiments without departing from the scope of thefollowing claims.

1. A package structure of a compound semiconductor device, comprising: athin film substrate including a first conductive film, a secondconductive film, and an insulating dielectric material, wherein theinsulating dielectric material is between the first conductive film andthe second conductive film; a die mounted on a surface of the firstconductive film; and a transparent encapsulation material overlaying thefirst conductive film, the second conductive film, and the die.
 2. Thepackage structure of the compound semiconductor device of claim 1,wherein the thickness of the thin film substrate ranges between 20-50μm.
 3. The package structure of the compound semiconductor device of 15claim 1, wherein the material of the insulating dielectric material isSiO, SiN, SiON, TaO, AlO, TiO, AlN, TiN, epoxy resin, silicone orinsulating polymer.
 4. The package structure of a compound semiconductordevice of claim 1, wherein the die is an LED, a laser LED or aphotodiode die.
 5. The package structure of a compound semiconductordevice of claim 1, further comprising at least one metal wireelectrically connecting the die and the thin film substrate.
 6. Thepackage structure of a compound semiconductor device of claim 1, furthercomprising a plurality of bumps electrically connecting the die and thethin film substrate.
 7. The package structure of a compoundsemiconductor device of claim 1, wherein the first conductive filmfurther comprises a die-bonding groove on which the die is mounted. 8.The package structure of a compound semiconductor device of claim 7,further comprising a reflecting layer overlaid on the die-bondinggroove.
 9. The package structure of a compound semiconductor device ofclaim 5, wherein the first conductive film further comprises a firstwire-bonding groove for bonding the metal wire, and the secondconductive film further comprises a second wire-bonding groove forbonding the metal wire.
 10. The package structure of a compoundsemiconductor device of claim 1, further comprising a patternedinsulating material layer stacked on the thin film substrate, whereinthe insulating material layer comprises a die-bonding groove for bondingthe die.
 11. The package structure of a compound semiconductor device ofclaim 1, further comprising a patterned insulating material layerstacked on the thin film substrate, wherein the insulating materiallayer comprises a die-bonding groove for bonding the die and at leastone wire-bonding groove for bonding the metal wire.
 12. A manufacturingmethod of a package structure of a compound semiconductor device,comprising the steps of: providing a thin film substrate comprising afirst conductive film, a second conductive film, and an insulatingdielectric material; mounting a die onto the first conductive film,electrically connecting an anode of the die to the first conductivefilm, and electrically connecting a cathode of the die to the secondconductive film; and overlaying a transparent encapsulation material onthe die.
 13. The manufacturing method of a package structure of acompound semiconductor device of claim 12, wherein thin film substrateis manufactured by the following steps: providing a sheet; forming atleast one slot on the sheet to divide the sheet into the firstconductive film and the second conductive film; and filling theinsulating dielectric material in the slot.
 14. The manufacturing methodof a package structure of a compound semiconductor device of claim 13,wherein the slot is formed by a drilling process, an etching process ora punching process.
 15. The manufacturing method of a package structureof a compound semiconductor device of claim 13, further comprising astep of forming a die-bonding groove on the first conductive film. 16.The manufacturing method of a package structure of a compoundsemiconductor device of claim 15, wherein the die is mounted onto thedie-bonding groove.
 17. The manufacturing method of a package structureof a compound semiconductor device of claim 15, further comprising astep of forming a plurality of wire-bonding grooves on the firstconductive film and the second conductive film, wherein each of thewire-bonding grooves is formed where at least one of the metal wires isbonded.
 18. The manufacturing method of a package structure of acompound semiconductor device of claim 13, further comprising a step ofstacking a patterned insulating material layer on the thin filmsubstrate, wherein the insulating material layer comprises a die-bondinggroove for bonding the die and a plurality of wire-bonding grooves forbonding at least one metal wire.
 19. The manufacturing method of apackage structure of a compound semiconductor device of claim 12,wherein the step of mounting the die onto the first conductive filmfurther comprises a sub-step of electrically connecting the die to thethin film substrate by wire bonding or flip-chip bonding.
 20. Themanufacturing method of a package structure of a compound semiconductordevice of claim 17, wherein the wire-bonding grooves are formed by aphotolithography etching process, an electroforming process and adrilling process.